inchange semiconductor isc product specification isc silicon npn power transistor bdw93/a/b/c description collector current -i c = 12a collector-emitter sustaining voltage- : v ceo(sus) = 45v(min)- bdw93; 60v(min)- BDW93A 80v(min)- bdw93b; 100v(min)- bdw93c complement to type bdw94/a/b/c applications designed for hammer drivers, audio amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit bdw93 45 BDW93A 60 bdw93b 80 v cbo collector-base voltage bdw93c 100 v bdw93 45 BDW93A 60 bdw93b 80 v ceo collector-emitter voltage bdw93c 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 12 a i cm collector current-peak 15 a i b b base current 0.2 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor bdw93/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdw93 45 BDW93A 60 bdw93b 80 v ceo(sus) collector-emitter sustaining voltage bdw93c i c = 100ma; i b = 0 100 v v ce(sat)-1 collector-emitter saturation voltage i c = 5a; i b = 20ma b 2.0 v v ce(sat)-2 collector-emitter saturation voltage i c = 10a; i b = 0.1a 3.0 v v be(sat)-1 base-emitter saturation voltage i c = 5a; i b = 20ma b 2.5 v v be(sat)-1 base-emitter saturation voltage i c = 10a; i b = 0.1a 4.0 v bdw93 v cb = 45v; i e = 0 BDW93A v cb = 60v; i e = 0 bdw93b v cb = 80v; i e = 0 i cbo collector cutoff current bdw93c v cb = 100v; i e = 0 0.1 ma bdw93 v ce = 45v; i b = 0 b BDW93A v ce = 60v; i b = 0 b bdw93b v ce = 80v; i b = 0 b i ceo collector cutoff current bdw93c v ce = 100v; i b = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 2.0 ma h fe-1 dc current gain i c = 3a; v ce = 3v 1000 h fe-2 dc current gain i c = 5a; v ce = 3v 750 20000 h fe-3 dc current gain i c = 10a; v ce = 3v 100 v ecf-1 c-e diode forward voltage i f = 5a 2.0 v v ecf-2 c-e diode forward voltage i f = 10a 4.0 v isc website www.iscsemi.cn 2
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